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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT46A DESCRIPTION *High Voltage *High Speed Switching APPLICATIONS *General purpose switching *Switch mode power supply *Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCES VCEO VEBO IC IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 1000 450 7 UNIT V Collector Current-Continuous Base Current-Peak w w scs .i w 5 3 100 150 -65~150 V V .cn mi e A A PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.76 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUT46A TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.3 0.1 1.0 1.0 V ICBO Collector Cutoff Current VCB=1000V; IE= 0 VCB=1000V; IE= 0; TC=125 VEB= 7V; IC= 0 mA IEBO Emitter Cutoff Current hFE DC Current Gain w w scs .i w IC= 0.5A; VCE= 5V .cn mi e 10 mA 35 isc Websitewww.iscsemi.cn |
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